VMO60-05F【PDF 1/2 页】MOSFET N-CH 500V 60A TO-240AA

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Sheet目录532

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HiPerFET TM

Power Module

High dv/dt, Low t rr , HDMOS TM Family

VMO 60-05F

V DSS = 500 V

I D25 = 60 A

R DS(on) = 65 m W

TO-240 AA

Preliminary Data

1 = Drain

5 = Gate

3 = Source

6 = Kelvin Source

Symbol

Conditions

Maximum Ratings

Features

V DSS

V DGR

V GS

V GSM

I D25

I D100

I DM

P tot

T J = 25°C to 150°C

T J = 25°C to 150°C; R GS = 10 k W

Continuous

Transient

T C = 25°C

T C = 100°C

T C = 25°C, t p = 10 μs, pulse width limited by T JM

T C = 25°C

500

± 20

± 30

240

590

? International standard package

? Direct copper bonded Al 2 O 3 ceramic

base plate

? Isolation voltage 3600 V~

? Low R DS(on) HDMOS TM process

Applications

? Switched-mode and resonant-mode

T J

T JM

T stg

-40 ... +150

150

-40 ... +125

°C

power supplies

? Uninterruptible power supplies (UPS)

? DC servo and robot drives

? DC choppers

V ISOL

50/60 Hz, t = 1 min

I ISOL ￡ 1 mA, t = 1 s

3000

3600

M d

Mounting torque(M5 or 10-32 UNF)

Terminal connection torque (M5)

2.5-4.0/22-35 Nm/lb.in.

Advantages

? Easy to mount with two screws

Weight

Typical including screws

? Space and weight savings

? High power density

? Low losses

Symbol

Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min. typ. max.

V DSS

V GS = 0 V

500

V GS(th)

V DS = V GS , I D = 24 mA

I GSS

I DSS

V GS = ± 20 V DC, V DS = 0

V DS = V DSS , V GS = 0 V, T J = 25°C

V DS = 0.8 ? V DSS , V GS = 0 V, T J = 125°C

500 nA

600 μA

3 mA

R DS(on)

V GS = 10 V, I D = 0.5 ? I D25

Pulse test, t ￡ 300 μs, duty cycle d ￡ 2 %

75 m W

Data per MOSFET unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

1-2

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